TPCF8305 Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – Notebook PCs Mobile Handsets

MOSFETs Silicon P-Channel MOS (U-MOS)
TPCF8305
1. Applications
• Notebook PCs
• Mobile Handsets
2. Features
(1) Small footprint due to a small and thin package
(2) Low drain-source on-resistance: R_DS(ON) = 47 mΩ (typ.) (V_GS = -4.5 V)
(3) Low leakage current: I_DSS = -10 µA (max) (V_DS = -20 V)
(4) Enhancement mode: V_th = -0.5 to -1.2 V (V_DS = -10 V, I_D = -0.2 mA)
3. Packaging and Internal Circuit
TPCF8305
VS-8
1: Source1
2: Gate1
3: Source2
4: Gate2
5, 6: Drain2
7, 8: Drain1
4. Absolute Maximum Ratings (Note) (T_a = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DSS
-20
V
Gate-source voltage
Drain current (DC)
V_GSS
±12
(Note 1)
I_D
-4
A
Drain current (pulsed)
(Note 1)
I_DP
-16
Power dissipation (single operation)
Power dissipation
(per device for dual operation)
(t = 5 s)
(t = 5 s)
(Note 2), (Note 4)
(Note 2), (Note 5)
P_D(1)
P_D(2)
1.35
W
1.12
Power dissipation (single operation)
(t = 5 s)
(Note 3), (Note 4) P_D(1)
0.53
Power dissipation
(per device for dual operation)
(t = 5 s)
(Note 3), (Note 5) P_D(2)
0.33
Single-pulse avalanche energy
Avalanche current
Channel temperature
(Note 6)
E_AS
I_AR
T_ch
10.4
mJ
-4
A
150

Storage temperature
T_stg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-07-29
Rev.1.0