TPCF8201_07 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

TPCF8201
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
TPCF8201
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Low drain-source ON resistance: R_{DS (ON)} = 38 mΩ (typ.)
• High forward transfer admittance: |Y_fs| = 5.4 S (typ.)
• Low leakage current: I_DSS = 10 μA (max) (V_DS = 20 V)
• Enhancement-mode: V_th = 0.5 to 1.2 V
(V_DS = 10 V, I_D = 200 μA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Single-device operation
Drain power
(Note 3a)
dissipation
(t = 5 s) (Note 2a) Single-device value at
dual operation (Note 3b)
Single-device operation
Drain power
(Note 3a)
dissipation
(t = 5 s) (Note 2b) Single-device value at
dual operation (Note 3b)
Single pulse avalanche energy (Note 4)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_{D (1)}
P_{D (2)}
P_{D (1)}
P_{D (2)}
E_AS
I_AR
E_AR
T_ch
T_stg
Note: For Notes 1 to 6, refer to the next page.
20
V
20
V
±12
V
3
A
12
1.35
1.12
W
0.53
0.33
1.46
mJ
1.5
A
0.11
mJ
150
°C
−55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3U1B
Weight: 0.011 g (typ.)
Circuit Configuration
8
7
6
5
1
2
3
4
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with caution.
1
2007-01-16