TPCF8003 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – notebook PC Applications Portable Equipment Applications

TPCF8003
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
TPCF8003
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Small footprint due to small and thin package
• Low drain-source ON-resistance: R_{DS (ON)} =14 mΩ (typ.)
（VGS= 4.5V）
• Low leakage current: I_DSS = 10 μA (max) (V_DS = 20 V)
• Enhancement mode: V_th = 0.5 to 1.2 V
(V_DS = 10 V, I_D = 200 μA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(t = 5 s)
(Note 2a)
Drain power dissipation
(t = 5 s)
(Note 2b)
Single pulse avalanche energy (Note 3)
Avalanche current
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
E_AS
I_AR
T_ch
T_stg
20
V
20
V
±12
V
7
A
28
2.5
W
0.7
W
3.2
mJ
3.5
A
150
°C
−55 to 150
°C
1. Drain
2. Drain
3. Drain
4. Gate
5.Source
6. Drain
7. Drain
8. Drain
JEDEC
―
JEITA
―
TOSHIBA
2-3U1A
Weight: 0.011 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Circuit Configuration
Characteristics
Symbol
Max Unit
Thermal resistance, channel to ambient (t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient (t = 5 s)
(Note 2b)
R_{th (ch-a)}
R_{th (ch-a)}
50.0 °C/W
178.6 °C/W
Note: For Notes 1 to 3, refer to the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2010-01-14