TPCF8001 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

TPCF8001
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
TPCF8001
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Low drain-source ON resistance: R_{DS (ON)} = 19 mΩ (typ.)
• High forward transfer admittance: |Y_fs| = 8 S (typ.)
• Low leakage current: I_DSS = 10 μA (max.) (V_DS = 30 V)
• Enhancement mode: V_th = 1.3 to 2.5 V
(V_DS = 10 V, I_D = 1mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(t = 5 s)
(Note 2a)
Drain power dissipation
(t = 5 s)
(Note 2b)
Single-pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy (Note 4)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
30
V
30
V
±20
V
7
A
28
2.5
W
0.7
W
8
mJ
3.5
A
0.25
mJ
150
°C
−55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3U1A
Weight: 0.011 g (typ.)
Circuit Configuration
8765
1234
Note: For Notes 1 to 5, refer to the next page
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1
2007-01-16