TPCC8104 Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – Lithium-Ion Secondary Batteries Power Management Switches

MOSFETs Silicon P-Channel MOS (U-MOS)
TPCC8104
1. Applications
• Lithium-Ion Secondary Batteries
• Power Management Switches
2. Features
(1) Small footprint due to a small and thin package
(2) Low drain-source on-resistance: R_DS(ON) = 6.8 mΩ (typ.) (V_GS = -10 V)
(3) Low leakage current: I_DSS = -10 µA (max) (V_DS = -30 V)
(4) Enhancement mode: V_th = -0.8 to -2.0 V (V_DS = -10 V, I_D = -0.5 mA)
3. Packaging and Internal Circuit
TPCC8104
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
TSON Advance
4. Absolute Maximum Ratings (Note) (T_a = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DSS
-30
V
Gate-source voltage
V_GSS
-25/+20
Drain current (DC)
(Note 1)
I_D
-20
A
Drain current (pulsed)
(Note 1)
I_DP
-60
Power dissipation
(T_c = 25)
P_D
27
W
Power dissipation
(t = 10 s)
(Note 2)
P_D
1.9
W
Power dissipation
(t = 10 s)
(Note 3)
P_D
0.7
W
Single-pulse avalanche energy
(Note 4)
E_AS
104
mJ
Avalanche current
I_AR
-20
A
Channel temperature
T_ch
150

Storage temperature
T_stg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2011-06-07
Rev.2.0