TPCC8103 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅤ)

TPCC8103
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅤ)
TPCC8103
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Small footprint due to a small and thin package
• Low drain-source ON-resistance:
R_{DS (ON)} = 9.4 mΩ (typ.) (V_GS = −10 V)
• Low leakage current: I_DSS = -10 μA (max) (V_DS = -30 V)
• Enhancement mode: V_th = -0.8 to -2.0 V (V_DS = -10 V, I_D = -1.0 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation (Tc = 25°C)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc = 25°C) (Note 4)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
−30
V
−30
V
±20
V
−18
A
−54
27
W
1.9
W
0.7
W
84
mJ
−18
A
1.59
mJ
150
°C
−55 to 150
°C
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1,2,3:SOURCE 4:GATE
5,6,7,8:DRAIN
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-3X1A
Weight: 0.02 g (typ.)
Circuit Configuration
8765
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2009-07-15