TPCC8076 Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – MOSFETs Silicon N-Channel MOS (U-MOS)

MOSFETs Silicon N-Channel MOS (U-MOS)
TPCC8076
1. Applications
• Lithium-Ion Secondary Batteries
• Notebook PCs
• Mobile Equipments
2. Features
(1) Small footprint due to a small and thin package
(2) Low drain-source on-resistance: R_DS(ON) = 3.7 mΩ (typ.) (V_GS = 10 V)
(3) Low leakage current: I_DSS = 10 µA (max) (V_DS = 33 V)
(4) Enhancement mode: V_th = 1.3 to 2.3 V (V_DS = 10 V, I_D = 0.3 mA)
3. Packaging and Internal Circuit
TPCC8076
1,2, 3: Source
4: Gate
5, 6, 7, 8: Drain
TSON Advance
4. Absolute Maximum Ratings (Note) (T_a = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DSS
33
V
Gate-source voltage
V_GSS
±20
Drain current (DC)
(Note 1)
I_D
27
A
Drain current (pulsed)
(Note 1)
I_DP
81
Power dissipation
(T_c = 25 )
P_D
39
W
Power dissipation
(t = 10 s)
(Note 2)
P_D
1.9
Power dissipation
(t = 10 s)
(Note 3)
P_D
0.7
W
Single-pulse avalanche energy
(Note 4)
E_AS
82
mJ
Avalanche current
I_AR
27
A
Channel temperature
T_ch
150

Storage temperature
T_stg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2011-06-06
Rev.2.0