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TPCC8065-H Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – MOSFETs Silicon N-Channel MOS (U-MOS-H) | |||
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MOSFETs Silicon N-Channel MOS (U-MOSî²-H)
TPCC8065-H
1. Applications
⢠High-Efficiency DC-DC Converters
⢠Notebook PCs
⢠Mobile Handsets
2. Features
(1) Small, thin package
(2) High-speed switching
(3) Small gate charge: QSW = 4.3 nC (typ.)
(4) Low drain-source on-resistance: RDS(ON) = 11.7 m⦠(typ.) (VGS = 4.5 V)
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
(6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA)
3. Packaging and Internal Circuit
TPCC8065-H
TSON Advance
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
1
2011-06-02
Rev.2.0
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