TPCA8A10-H Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – MOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode)

MOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode)
TPCA8A10-H
1. Applications
• High-Efficiency DC-DC Converters
• Notebook PCs
• Mobile Handsets
2. Features
(1) Built-in a schottky barrier diode
Low forward voltage: V_DSF = -0.6 V (max)
(2) High-speed switching
(3) Small gate charge: Q_SW = 12 nC (typ.)
(4) Low drain-source on-resistance: R_DS(ON) = 2.9 mΩ (typ.) (V_GS = 4.5 V)
(5) Low leakage current: I_DSS = 100 µA (max) (V_DS = 30 V)
(6) Enhancement mode: V_th = 1.3 to 2.3 V (V_DS = 10 V, I_D = 0.5 mA)
3. Packaging and Internal Circuit
TPCA8A10-H
SOP Advance
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
1
2011-06-19
Rev.1.0