TPCA8A02-H Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – High Efficiency DC-DC Converter Applications Notebook PC Applications

TPCA8A02-H
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode
Silicon N-Channel MOS Type (U-MOS V-H)
TPCA8A02-H
High Efficiency DC-DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
• Built-in a schottky barrier diode
Low forward voltage: V_DSF = −0.6 V (max)
• High-speed switching
• Small gate charge: Q_SW = 8.6 nC (typ.)
• Low drain-source ON-resistance: R_{DS (ON)} = 3.8 mΩ (typ.)
• High forward transfer admittance: |Y_fs| = 90 S (typ.)
• Low leakage current: I_DSS = 100 μA (max) (V_DS = 30 V)
• Enhancement mode: V_th = 1.3 to 2.3 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
0.5±0.1 1.27
8
0.4±0.1
5
0.05 M A
0.15±0.05
0.95±0.05
1
4
5 .0 ± 0 .2
0.595
A
0.166±0.05
S
0.05 S
1
4 1.1±0.2
Characteristic
Symbol
Rating
Unit
4.25±0.2
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation (Tc=25℃)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc=25℃) (Note 4)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
30
V
30
V
±20
V
34
A
102
45
W
2.8
W
1.6
W
150
mJ
34
A
3.23
mJ
150
°C
−55 to 150
°C
8
5 _0.8±0.1
1,2,3:SOURCE 4:GATE
5,6,7,8:DRAIN
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-5Q1A
Weight: 0.069 g (typ.)
Circuit Configuration
8765
Note: For Notes 1 to 4, refer to the next page.
1234
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1
2010-01-19