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TPCA8128 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Lithium Ion Battery Applications Power Management Switch Applications
TPCA8128
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS Ⅵ)
TPCA8128
Lithium Ion Battery Applications
Power Management Switch Applications
• Small footprint due to compact and slim package
• Low drain-source ON resistance : RDS (ON) = 3.7 mΩ (typ.)
• Low leakage current : IDSS = −10 μA (max) (VDS = −30 V)
• Enhancement mode
: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −0.5 m A )
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
DC
Drain current
Pulse
(Note 1)
(Note 1)
Drain power dissipation (Tc = 25°C)
Drain power dissipation (t = 10 s)
(Note 2a)
Drain power dissipation (t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
PD
EAS
IAR
Tch
Tstg
−30
V
−30
V
−25/+20
V
−34
A
−102
45
2.8
W
1.6
150
mJ
−34
A
150
°C
−55 to 150
°C
Note: For (Note 1), (Note 2), (Note 3), refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with caution.
Unit: mm
1.27 0.4 ± 0.1
8
0.05 M A
5
0.15 ± 0.05
4
0.595
1
A
5.0 ± 0.2
0.05 S
S
1
4
4.25 ± 0.2
8
5
1, 2, 3: Source
5, 6, 7, 8: Drain
4: Gate
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-5Q1A
Weight: 0.076 g (typ.)
Circuit Configuration
8765
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2010-01-07