TPCA8121 Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – MOSFETs Silicon P-Channel MOS (U-MOS)

MOSFETs Silicon P-Channel MOS (U-MOS)
TPCA8121
1. Applications
• Lithium-Ion Secondary Batteries
• Power Management Switches
2. Features
(1) Small, thin package
(2) Low drain-source on-resistance: R_DS(ON) = 2.4 mΩ (typ.) (V_GS = -10 V)
(3) Low leakage current: I_DSS = -10 µA (max) (V_DS = -30 V)
(4) Enhancement mode: V_th = -0.8 to -2.0 V (V_DS = -10 V, I_D = -1 mA)
3. Packaging and Internal Circuit
TPCA8121
1, 2, 3: Source 4: Gate
5, 6, 7, 8: Drain
SOP Advance
4. Absolute Maximum Ratings (Note) (T_a = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DSS
-30
V
Drain-gate voltage
(R_GS = 20 kΩ)
V_DGR
-30
Gate-source voltage
V_GSS
-20/+10
Drain current (DC)
(Note 1)
I_D
-45
A
Drain current (pulsed)
(Note 1)
I_DP
-135
Power dissipation
(T_c = 25)
P_D
45
W
Power dissipation
(t = 10 s)
(Note 2)
P_D
2.8
W
Power dissipation
(t = 10 s)
(Note 3)
P_D
1.6
W
Single-pulse avalanche energy
(Note 4)
E_AS
263
mJ
Avalanche current
I_AR
-45
A
Channel temperature
(Note 5)
T_ch
175

Storage temperature
T_stg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2011-09-27
Rev.1.0