TPCA8105 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Silicon P Channel MOS Type (U-MOS III) Notebook PC Applications

TPCA8105
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
TPCA8105
Notebook PC Applications
Portable Equipment Applications
• Small footprint due to compact and slim package
• Low drain-source ON resistance : RDS (ON) = 23 mΩ (typ.)
• High forward transfer admittance :|Yfs| = 14 S (typ.)
• Low leakage current : IDSS = −10 µA (VDS = −12 V)
• Enhancement mode
: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 µA )
0.5±0.1 1.27
8
0 .4 ± 0 .1
5
Unit: mm
0.05 M A
0 .1 5 ± 0 .0 5
0 .9 5 ± 0 .0 5
1
4
5.0±0.2
0.595
A
0 .1 6 6 ± 0 .0 5
S
0.05 S
1
4 1.1±0.2
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
DC
Drain current
Pulse
(Note 1)
(Note 1)
Drain power dissipation (Tc = 25°C)
Drain power dissipation (t = 10 s)
(Note 2a)
Drain power dissipation (t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc = 25°C) (Note 4)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
−12
V
−12
V
±8
V
−6
A
−24
20
2.8
W
1.6
25.1
mJ
−6
A
0.8
mJ
150
°C
−55~150
°C
4 .2 5 ± 0 .2
8
5 _0.8±0.1
1, 2, 3: Source
5, 6, 7, 8: Drain
4: Gate
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-5Q1A
Weight: 0.076 g (typ.)
Circuit Configuration
8765
1234
Note: For (Note 1), (Note 2), (Note 3), (Note 4), refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with caution.
1
2006-11-17