TPCA8104 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – High-Side Switching Applications

TPCA8104
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III)
TPCA8104
High-Side Switching Applications
Portable Equipment Applications
• Small footprint due to small and thin package
• Low drain-source ON-resistance: RDS (ON) = 11 mΩ (typ.)
• High forward transfer admittance:|Yfs| = 50 S (typ.)
• Low leakage current: IDSS = -10 µA (VDS = -60 V)
• Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA)
0.5±0.1 1.27
8
0 .4 ± 0 .1
5
Unit: mm
0.05 M A
0 .1 5 ± 0 .0 5
0 .9 5 ± 0 .0 5
1
4
5.0±0.2
0.595
A
0 .1 6 6 ± 0 .0 5
S
0.05 S
1
4 1.1±0.2
Absolute Maximum Ratings (Ta = 25°C)
4 .2 5 ± 0 .2
Characteristic
Symbol
Rating
Unit
8
5 _0.8±0.1
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
DC
Drain current
Pulse
(Note 1)
(Note 1)
Drain power dissipation (Tc = 25°C)
Drain power dissipation (t = 10 s)
(Note 2a)
Drain power dissipation (t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc = 25°C) (Note 4)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
Note: For Notes 1 to 4, see the next page.
-60
V
-60
V
±20
V
-40
A
-120
45
2.8
W
1.6
116
mJ
-40
A
4.5
mJ
150
°C
−55~150
°C
1, 2, 3: Source
5, 6, 7, 8: Drain
4: Gate
JEDEC
―
JEITA
―
TOSHIBA
2-5Q1A
Weight: 0.080 g (typ.)
Circuit Configuration
8765
1234
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1
2006-11-17