TPCA8102 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)

TPCA8102
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ)
TPCA8102
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
Unit: mm
1.27 ^0.4±0.1
8
5
0.05 M A
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 4.5mΩ (typ.)
• High forward transfer admittance: |Yfs| = 60S (typ.)
• Low leakage current: IDSS = −10 µA (max) (VDS = −30 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation (Tc=25℃)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc=25℃) (Note 4)
Channel temperature
Storage temperature range
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
Rating
Unit
−30
V
−30
V
±20
V
− 40
A
−120
45
W
2.8
W
1.6
W
208
mJ
− 40
A
4.5
mJ
150
°C
−55 to 150
°C
Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next
page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
0.15±0.05
1
4
5.0±0.2
0.595
A
0.05 S
S
1
4
4.25±0.2
8
5 _0.8±0.1
1,2,3：SOURCE
4：GATE
5,6,7,8：DRAIN
JEDEC
―
JEITA
―
TOSHIBA
2-5Q1A
Weight: 0.076 g (typ.)
Circuit Configuration
8765
1234
1
2003-08-29