TPCA8026 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ)

TPCA8026
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ)
TPCA8026
Lithium-Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
Unit: mm
1.27 0.4 ± 0.1
8
0.05 M A
5
• Small footprint due to a small and thin package
• Low drain-source ON-resistance: R_{DS (ON)} = 1.8 mΩ (typ.)
• High forward transfer admittance: |Y_fs| =100 S (typ.)
• Low leakage current: I_DSS = 10 μA (max) (V_DS = 30 V)
• Enhancement mode: V_th = 1.3 to 2.5 V (V_DS = 10 V, I_D = 1 mA)
0.15 ± 0.05
1
4
0.595
A
5.0 ± 0.2
Absolute Maximum Ratings (Ta = 25°C)
0.05 S
S
1
4
Characteristic
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation (Tc = 25℃)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc = 25℃) (Note 4)
Channel temperature
Storage temperature range
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
Rating
Unit
30
V
30
V
±20
V
45
A
135
45
W
2.8
W
1.6
W
263
mJ
45
A
3.4
mJ
150
°C
−55 to 150
°C
4.25 ± 0.2
8
5
1,2,3: SORCE 4: GATE
5,6,7,8:DRAIN
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-5Q1A
Weight: 0.069 g (typ.)
Circuit Configuration
8765
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
1234
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1
2008-06-26