TPCA8024 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Lithium-Ion Battery Applications Notebook PC Applications Portable Equipment Applications

TPCA8024
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
TPCA8024
Lithium-Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
Unit: mm
1.27 0.4 ± 0.1
8
0.05 M A
5
• Small footprint due to a small and thin package
• Low drain-source ON-resistance: R_{DS (ON)} = 3.5 mΩ (typ.)
• High forward transfer admittance: |Y_fs| = 72 S (typ.)
• Low leakage current: I_DSS = 10 μA (max) (V_DS = 30 V)
• Enhancement mode: V_th = 1.3 to 2.5 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
0.15 ± 0.05
1
4
0.595
A
5.0 ± 0.2
0.05 S
S
1
4
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc=25℃)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc=25℃) (Note 4)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
30
V
30
V
±20
V
35
A
105
35
W
2.8
W
1.6
W
159
mJ
35
A
3.5
mJ
150
°C
-55 to 150
°C
4.25 ± 0.2
8
5
1,2,3: SOURCE 4: GATE
5,6,7,8: DRAIN
JEDEC
―
JEITA
―
TOSHIBA
2-5Q1A
Weight: 0.069 g (typ.)
Circuit Configuration
8765
Note: For Note 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
1234
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability
test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1
2010-01-05