TPCA8014-H Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)

TPCA8014-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)
TENTATIVE TPCA8014-H
High Speed and High Efficiency DC-DC Converters
Notebook PC Applications
Portable Equipment Applications
0.5±0.1 1.27 ^0.4±0.1
8
5
Unit: mm
0.05 M A
• Small footprint due to small and thin package
• High speed switching
• Small gate charge: Qsw = 7.4 nC (typ.)
• Low drain-source ON resistance: RDS (ON) = 10.5 mO (typ.)
• High forward transfer admittance: |Yfs| = TBD S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)
• Enhancement mode: V th = 1.1 to 2.3 V (V DS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation (Tc=25 )
Drain power dissipation (t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc=25 ) (Note 4)
Channel temperature
Storage temperature range
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_{D P}
P_D
P_D
P_D
E_{A S}
I_AR
E_AR
T_{c h}
T_stg
Rating
Unit
40
V
40
V
±20
V
30
A
90
45
W
2.8
W
1.6
W
84
mJ
30
A
TBD
mJ
150
°C
−55 to 150
°C
0.15±0.05
0.95±0.05
1
4
5.0±0.2
0.595
A
0.166±0.05
S
0.05 S
1
4 1.1±0.2
4.25±0.2
8
5 _0.8±0.1
1,2,3 SOURCE 4 GATE
5,6,7,8 DRAIN
JEDEC
?
JEITA
?
TOSHIBA
2-5Q1A
Weight: 0.080 g (typ.)
Circuit Configuration
8765
1234
Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next
page.
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2004-6-25