TPCA8011-H Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – High Efficiency DC／DC Converter Applications

TPCA8011-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII)
TPCA8011-H
High Efficiency DC／DC Converter Applications
Notebook PC Applications
Portable-Equipment Applications
Unit: mm
0.5±0.1 1.27 ^0.4±0.1
8
5
0.05 M A
• Small footprint due to a small and thin package
• High speed switching
• Small gate charge: QSW =16 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 2.7 mΩ (typ.)
• High forward transfer admittance: |Yfs| =120 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 20 V)
• Enhancement mode: Vth = 0.6 to 1.3 V (VDS = 10 V, ID = 200 μA)
0.15±0.05
0.95±0.05
1
4
5.0±0.2
0.595
A
0.166±0.05
S
0.05 S
1
4 1.1±0.2
4.25±0.2
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation (Tc=25℃)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc=25℃) (Note 4)
Channel temperature
Storage temperature range
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
Rating
Unit
20
V
20
V
±12
V
40
A
120
45
W
2.8
W
1.6
W
208
mJ
40
A
2.0
mJ
150
°C
−55 to 150
°C
8
5 _0.8±0.1
1,2,3：SOURCE 4：GATE
5,6,7,8：DRAIN
JEDEC
JEITA
TOSHIBA
―
―
2-5Q1A
Weight: 0.069 g (typ.)
Circuit Configuration
8765
1234
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1
2006-11-16