TPCA8010-H_09 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – High-Speed Switching Applications

TPCA8010-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ)
TPCA8010-H
High-Speed Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
Unit: mm
1.27 ^0.4±0.1
8
5
0.05 M A
• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: Q_SW = 3.7 nC (typ.)
• Low drain-source ON-resistance: R_{DS (ON)} = 0.38Ω (typ.)
• High forward transfer admittance: |Y_fs| = 3.9S (typ.)
• Low leakage current: I_DSS = 100 μA (max) (V_DS = 200V)
• Enhancement mode: V_th = 2.0 to 4.0 V (V_DS = 10 V, I_D = 1 mA)
0.15±0.05
1
4
5.0±0.2
0.595
A
0.05 S
S
1
4
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation (Tc=25℃)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc=25℃) (Note 4)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
200
V
200
V
±20
V
5.5
A
11
45
W
2.8
W
1.6
W
19
mJ
5.5
A
1.5
mJ
150
°C
−55 to 150
°C
Note: For Notes 1 to 4, refer to the next page.
4.25±0.2
8
1, 2, 3 : SOURCE
4 : GATE
5, 6, 7, 8 : DRAIN
5 _0.8±0.1
JEDEC
―
JEITA
―
TOSHIBA
2-5Q1A
Weight: 0.069 g (typ.)
Circuit Configuration
8765
1234
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1
2009-12-21