TPCA8010-H Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – High Speed and High Efficiency DC-DC Converters

TPCA8010-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type( -MOSV)
TPCA8010-H ^TENTATIVE
High Speed and High Efficiency DC-DC Converters
• Small footprint due to small and thin package
• High speed switching
• Small gate charge: Qg = 10nC (typ.)
• Low drain-source ON resistance: RDS (ON) = 380mO (typ.)
• High forward transfer admittance: |Yfs| = S (typ.)
• Low leakage current: IDSS = 100 µA (max) (VDS = 100 V)
• Enhancement mode: V th = 2 to 4V (V DS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation (Tc=25 )
Drain power dissipation (t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc=25 ) (Note 4)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_{D P}
P_D
P_D
P_D
E_{A S}
I_AR
E_AR
T_{c h}
T_stg
200
V
200
V
±20
V
5.5
A
11
15
W
2.8
W
1.6
W
19
mJ
5.5
A
1.5
mJ
150
°C
−55~150
°C
Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next
page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
0.5±0.1 1.27 ^0.4±0.1
8
5
0.05 M A
0.15±0.05
0.95±0.05
1
4
5.0±0.2
0.595
A
0.166±0.05
S
0.05 S
1
4 1.1±0.2
4.25±0.2
8
5 _0.8±0.1
1,2,3 SOURCE 4 GATE
5,6,7,8 DRAIN
JEDEC
?
JEITA
?
TOSHIBA
?
Weight: 0.08 g (typ.)
Circuit Configuration
8765
1234
1
2004-3-2