TPCA8006-H Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVII)

TENTATIVE
TPCA8006-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVII)
TPCA8006-H
Switching Regulator Applications
Motor Drive Applications
• Small footprint due to small and thin package
• High speed switching
• Low drain-source ON resistance
: RDS (ON) = 41 mO (typ.) (VG=10V, ID=9A)
• High forward transfer admittance: |Yfs| = 15 S (typ.)
• Low leakage current: IDSS = 100 µA (max) (VDS = 100 V)
• Enhancement mode: V th = 3.0 to 5.0 V (V DS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Unit: mm
1.27 ^0.4±0.1
8
5
0.05 M A
0.15±0.05
1
4
5.0±0.2
0.595
A
0.05 S
S
1
4
Characteristics
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation (Tc=25 )
Drain power dissipation (t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_{D P}
P_D
P_D
P_D
E_{A S}
I_AR
E_AR
T_{c h}
T_stg
Rating
Unit
100
V
100
V
±20
V
18
A
36
45
W
2.8
W
1.6
W
224
mJ
18
A
4.5
mJ
150
°C
−55 to 150
°C
4.25±0.2
8
5 0.8±0.1
1,2,3 SOURCE 4 GATE
5,6,7,8 DRAIN
JEDEC
?
JEITA
?
TOSHIBA
2-5Q1A
Weight: 0.080 g (typ.)
Circuit Configuration
8765
1234
Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next
page.
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2004-03-08