TPCA8005-H Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type (Ultra High speed U-MOSIII)

TPCA8005-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)
TPCA8005-H ^TENTATIVE
High Speed and High Efficiency DC-DC Converters
Notebook PC Applications
Portable Equipment Applications
0.5±0.1 1.27
8
0 .4 ± 0 .1
5
Unit: mm
0.05 M A
• Small footprint due to small and thin package
• High speed switching
• Small gate charge: Qg = 24 nC (typ.)
• Low drain-source ON resistance: RDS (ON) = 6.8 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 46S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation (Tc=25℃)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc=25℃) (Note 4)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
30
V
30
V
±20
V
30
A
90
45
W
2.8
W
1.6
W
117
mJ
30
A
4.5
mJ
150
°C
−55 to 150
°C
0 .1 5 ± 0 .0 5
0 .9 5 ± 0 .0 5
1
4
5 .0 ± 0 .2
0.595
A
0 .1 6 6 ± 0 .0 5
S
0.05 S
1
4 1.1±0.2
4 .2 5 ± 0 .2
8
5 _0.8±0.1
1,2,3：SOURCE 4：GATE
5,6,7,8：DRAIN
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
8765
1234
Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next
page.
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2003-11-13