TPC8A05-H Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – High Efficiency DC-DC Converter Applications Notebook PC Applications

TPC8A05-H
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode
Silicon N-Channel MOS Type (U-MOS V-H)
TPC8A05-H
High Efficiency DC-DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Built-in schottky barrier diode
• Low forward voltage: VDSF = 0.6 V (max)
• High-speed switching
• Small gate charge: Q_SW = 3.7 nC (typ.)
• Low drain-source ON-resistance: R_{DS (ON)} = 9.5 mΩ (typ.)
• High forward transfer admittance: |Y_fs| = 26 S (typ.)
• Low leakage current: I_DSS = 100 μA (max) (V_DS = 30 V)
• Enhancement mode: V_th = 1.3 to 2.3 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc=25℃) (Note 4)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
30
V
30
V
±20
V
10
A
40
1.9
W
1.0
W
65
mJ
10
A
0.10
mJ
150
°C
−55 to 150
°C
Note: For Notes 1 to 4, refer to the next page.
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-6J1B
Weight: 0.085g (typ.)
Circuit Configuration
8765
1234
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1
2009-09-29