TPC8A02-H Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – ＴOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode High-Efficiency DC/DC Converter Applications

TPC8A02-H
ï¼´OSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode
Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS Ⅲ)
TPC8A02-H
High-Efficiency DC/DC Converter Applications
Notebook PC Applications
Portable-Equipment Applications
• Built-in schottky barrier diode
Low forward voltage: VDSF = 0.6V(Max.)
• High-speed switching.
• Small gate charge.: QSW ＝ 11 nC(Typ.)
• Low drain-source ON-resistance: RDS (ON) = 4.3 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 40 S (typ.)
• Low leakage current: IDSS = 100 µA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (t = 10 s)
(Note 2a)
Drain power dissipation (t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
Rating
Unit
30
V
30
V
±20
V
16
A
48
1.9
W
1.0
W
166
mJ
16
A
0.11
mJ
150
°C
−55 to 150
°C
1,2,3
4
5,6,7,8
SOURCE，ANODE
GATE
DRAIN，CATHODE
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.085 g (typ.)
Circuit Configuration
8765
1234
Note: For Notes 1 to 5, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care. Schottky barrier diodes have
large-reverse-current-leakage characteristic compared to other rectifier products. This current leakage combined with
improper operating temperature or voltage may cause thermal runaway. Please take forward and reverse loss into
consideration during design.
1
2006-11-16