TPC8406-H Datasheet, PDF (1/11 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P/N-Channel MOS Type (P-Channel／N-Channel Ultra-High-Speed U-MOSIII)

TPC8406-H
TOSHIBA Field Effect Transistor Silicon P/N-Channel MOS Type
(P-Channel／N-Channel Ultra-High-Speed U-MOSIII)
TPC8406-H
High Efficiency DC／DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
CCFL Inverter Applications
Unit: mm
• Small footprint due to a small and thin package
• High speed switching
• Low drain-source ON-resistance: P-Channel R_{DS (ON)} = 24 mΩ (typ.)
N-Channel R_{DS (ON)} = 22 mΩ (typ.)
• Small gate charge:
P-Channel Q_SW = 9.7 nC (typ.)
N-Channel Q_SW = 3.5 nC (typ.)
• High forward transfer admittance: P-Channel |Y_fs| = 13 S (typ.)
N-Channel |Y_fs| = 14 S (typ.)
• Low leakage current: P-Channel I_DSS = −10 μA (V_DS = −40 V)
N-Channel I_DSS = 10 μA (V_DS = 40 V)
• Enhancement mode
: P-Channel V_th = −0.8 to −2.0 V (V_DS = −10 V, I_D = −1 mA)
: N-Channel V_th = 1.1 to 2.3 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Rating
Symbol
Unit
P-Channel N-Channel
Drain-source voltage
V_DSS
−40
Drain-gate voltage (R_GS = 20 kΩ)
V_DGR
−40
Gate-source voltage
V_GSS
±20
DC
Drain current
Pulse
(Note 1) I_D
−6.5
(Note 1) I_DP
−26
Drain power
dissipation
Single-device operation
(Note 3a)
P_D(1)
1.5
(t = 10s)
Single-device value at
(Note 2a) _{dual operation (Note 3b)}
P_D(2)
1.1
Drain power
dissipation
Single-device operation
(Note 3a)
P_D(1)
0.75
(t = 10s)
Single-device value at
(Note 2b) dual operation (Note 3b)
P_D(2)
0.45
40
V
40
V
±20
V
6.5
A
26
1.5
1.1
W
0.75
0.45
Single-pulse avalanche energy
E_AS
19
19
(Note 4a) (Note 4b)
mJ
Avalanche current
I_AR
−6.5
6.5
A
Repetitive avalanche energy
Single-device value at operation
E_AR
0.08
mJ
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
T_ch
150
°C
T_stg
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-6J1E
Weight: 0.085 g (typ.)
Circuit Configuration
87
65
12
N-ch
34
P-ch
Note: For Notes 1 to 5, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1
2009-09-29