TPC8403 Datasheet, PDF (1/11 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII)

TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type
(P Channel U-MOSII/N Channel U-MOSII)
TPC8403
Motor Drive Applications
Notebook PC Applications
Portable Equipment Applications
TPC8403
Unit: mm
• Low drain-source ON resistance: P Channel RDS (ON) = 45 mΩ (typ.)
N Channel RDS (ON) = 25 mΩ (typ.)
• High forward transfer admittance: P Channel |Yfs| = 6.2 S (typ.)
N Channel |Yfs| = 7.8 S (typ.)
• Low leakage current:
• Enhancement mode
P Channel IDSS = −10 µA (VDS = −30 V)
N Channel IDSS = 10 µA (VDS = 30 V)
: P Channel Vth = −1.0~−2.2 V (VDS = −10 V, ID = −1 mA)
: N Channel Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Rating
Symbol
Unit
P Channel N Channel
Drain-source voltage
V_DSS
−30
Drain-gate voltage (R_GS = 20 kΩ)
V_DGR
−30
Gate-source voltage
V_GSS
±20
DC
Drain current
Pulse
(Note 1) I_D
(Note 1) I_DP
−4.5
−18
Drain power
dissipation
Single-device operation
(Note 3a)
P_D(1)
1.5
(t = 10s)
(Note 2a)
Single-device value at
dual operation (Note 3b)
P_D(2)
1.1
Drain power
dissipation
Single-device operation
(Note 3a)
P_D(1)
0.75
(t = 10s)
(Note 2b)
Single-device value at
dual operation (Note 3b)
P_D(2)
0.45
30
V
30
V
±20
V
6
A
24
1.5
1.1
W
0.75
0.45
Single pulse avalanche energy
E_AS
26.3
46.8
(Note 4a) (Note 4b)
mJ
Avalanche current
I_AR
−4.5
6
A
Repetitive avalanche energy
Single-device value at operation
E_AR
0.11
mJ
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
T_ch
150
°C
T_stg
−55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-6J1E
Weight: 0.080 g (typ.)
Circuit Configuration
87
65
12
N-ch
34
P-ch
Note 1, Note 2ab, Note 3ab, Note 4and Note 5: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2004-07-06