TPC8402 Datasheet, PDF (1/11 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (MOSVI/U-MOSII)

TPC8402
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (π−MOSVI/U−MOSII)
TPC8402
Lithium Ion Secondary Battery Applications
Notebook PCs
Portable Equipment Applications
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Unit: mmç
Low drain−source ON resistance
: P Channel RDS (ON) = 27 mΩ (typ.)
N Channel RDS (ON) = 37 mΩ (typ.)
High forward transfer admittance
: P Channel |Yfs| = 7 S (typ.)
N Channel |Yfs| = 6 S (typ.)
Low leakage current
: P Channel IDSS = −10 µA (VDS = −30 V)
N Channel IDSS = 10 µA (VDS = 30 V)
Enhancement−mode
: P Channel Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1mA)
N Channel Vth = 0.8~2.0 V (VDS = 10 V, ID = 1mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Rating
Symbol _{P Channel N Channel} Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
V_DSS
−30
V_DGR
−30
30
V
30
V
Gate-source voltage
DC
Drain current
Pulse
V_GSS
±20
±20
V
(Note 1) I_D
−4.5
5
A
(Note 1) I_DP
−18
20
Drain power
dissipation
Single-device operation
(Note 3a)
P_{D (1)}
1.5
(t = 10s)
(Note 2a)
Single-device value at
dual operation (Note 3b)
P_{D (2)}
1.0
Drain power
dissipation
Single-device operation
(Note 3a)
P_{D (1)}
0.75
(t = 10s)
Single-device value at
(Note 2b) _{dual operation (Note 3b)}
P_{D (2)}
0.45
1.5
1.0
W
0.75
0.45
Single pulse avalanche energy
E_AS
26.3
32.5
(Note 4a) (Note 4b)
mJ
Avalanche current
I_AR
−4.5
5
A
Repetitive avalanche energy
Single-device value at operation
E_AR
0.10
mJ
(Note 2a, Note 3b, Note 5)
Channel temperature
Storage temperature range
T_ch
150
°C
T_stg
−55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-6J1E
Weight: 0.080 g (typ.)
Circuit Configuration
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4a), (Note 4b) and (Note 5), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-05-07