TPC8401 Datasheet, PDF (1/11 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U-MOSII)

TPC8401
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U−MOSII)
TPC8401
Lithium Ion Secondary Battery Applications
Portable Equipment Applications
Notebook PCs
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Unit: mmç
Low drain−source ON resistance
: P Channel RDS (ON) = 27 mΩ (typ.)
N Channel RDS (ON) = 14 mΩ (typ.)
High forward transfer admittance
: P Channel |Yfs| = 7 S (typ.)
N Channel |Yfs| = 8 S (typ.)
Low leakage current
: P Channel IDSS = −10 µA (VDS = −30 V)
N Channel IDSS = 10 µA (VDS = 30 V)
Enhancement−mode
: P Channel Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1mA)
N Channel Vth = 0.8~2.5 V (VDS = 10 V, ID = 1mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Rating
Symbol _{P Channel N Channel} Unit
Drain-source voltage
V_DSS
−30
30
V
Drain-gate voltage (R_GS = 20 kΩ)
V_DGR
−30
30
V
Gate-source voltage
V_GSS
±20
±20
V
DC
Drain current
Pulse
(Note 1) I_D
−4.5
6
A
(Note 1) I_DP
−18
24
Drain power
dissipation
Single-device operation
(Note 3a)
P_{D (1)}
1.5
(t = 10s)
(Note 2a)
Single-device value at
dual operation (Note 3b)
P_{D (2)}
1.0
Drain power
dissipation
Single-device operation
(Note 3a)
P_{D (1)}
0.75
(t = 10s)
Single-device value at
(Note 2b) _{dual operation (Note 3b)}
P_{D (2)}
0.45
1.5
1.0
W
0.75
0.45
Single pulse avalanche energy
E_AS
26.3
46.8
(Note 4a) (Note 4b)
mJ
Avalanche current
I_AR
−4.5
6
A
Repetitive avalanche energy
Single-device value at operation
E_AR
0.10
mJ
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
T_ch
150
°C
T_stg
−55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-6J1E
Weight: 0.080 g (typ.)
Circuit Configuration
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4a), (Note 4b) and (Note 5), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-05-17