TPC8301 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Silicon P Channel MOS Type (L2-MOSVI)

TPC8301
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L²âˆ’π−MOSVI)
TPC8301
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
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Unit: mmç
Small footprint due to small and thin package
Low drain−source ON resistance : RDS (ON) = 95 mΩ (typ.)
High forward transfer admittance : |Yfs| = 4 S (typ.)
Low leakage current : IDSS = −10 µA (max) (VDS = −30 V)
Enhancement−mode : Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Drain power
dissipation
Single-device
operation (Note 3a)
(t = 10 s)
Single-devece value
(Note 2a) at dual operation
(Note 3b)
Drain power
dissipation
Single-device
operation (Note 3a)
(t = 10 s)
Single-devece value
(Note 2b) at dual operation
(Note 3b)
Single pulse avalanche energy
(Note 4)
Avalanche current
Repetitive avalanche energy
(Note 2a, Note 3b, Note 5)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_{D (1)}
P_{D (2)}
P_{D (1)}
P_{D (2)}
E_AS
I_AR
E_AR
T_ch
T_stg
−30
V
−30
V
±20
V
−3.5
A
−14
1.5
W
1.0
0.75
W
0.45
16
mJ
−3.5
A
0.10
mJ
150
ˆ
−55ʙ150
ˆ
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4)
and (Note 5), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
JEDEC
―
JEITA
―
TOSHIBA
2-6J1E
Weight: 0.080 g (typ.)
Circuit Configuration
1
2002-05-17