TPC8213-H Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – High-Efficiency DC／DC Converter Applications

TPC8213-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPC8213-H
High-Efficiency DC／DC Converter Applications
Notebook PC Applications
Portable-Equipment Applications
• Small footprint due to small and thin package
• High-speed switching
• Small gate charge: Q_SW = 2.9 nC (typ.)
• Low drain-source ON-resistance: R_{DS (ON)} = 40 mΩ (typ.)
• High forward transfer admittance: |Y_fs| =11 S (typ.)
• Low leakage current: I_DSS = 10 µA (max) (V_DS = 60 V)
• Enhancement mode: V_th = 1.1 to 2.3 V (V_DS = 10 V, I_D = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Drain power
dissipation
Single-device
operation (Note 3a)
(t = 10 s)
Single-device value
(Note 2a) at dual operation
(Note 3b)
Drain power
dissipation
Single-device
operation (Note 3a)
(t = 10 s)
Single-device value
(Note 2b) at dual operation
(Note 3b)
Single-pulse avalanche energy
(Note 4)
Avalanche current
Repetitive avalanche energy
(Note 2a, Note 3b, Note 5)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_{D (1)}
P_{D (2)}
P_{D (1)}
P_{D 2)}
E_AS
I_AR
E_AR
T_ch
T_stg
60
V
60
V
±20
V
5
A
20
1.5
W
1.1
0.75
W
0.45
90
mJ
5
A
0.087
mJ
150
℃
−55～150
℃
JEDEC
―
JEITA
―
TOSHIBA
2-6J1E
Weight: 0.085 g (typ.)
Circuit Configuration
Note: For Notes 1 to 5, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1
2006-11-17