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TPC8210_07 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications | |||
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TPC8210
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (UâMOS III)
TPC8210
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PC Applications
Unit: mm
z Low drainâsource ON resistance: RDS (ON) = 11 m⦠(typ.)
z High forward transfer admittance: |Yfs| = 13 S (typ.)
z Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
z Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Drain power
dissipation
(t = 10 s)
(Note 2a)
Single-device
operation
(Note 3a)
Single-device value
at dual operation
(Note 3b)
Drain power
dissipation
(t = 10 s)
(Note 2b)
Single-device
operation
(Note 3a)
Single-device value
at dual operation
(Note 3b)
Single pulse avalanche energy
(Note 4)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD (1)
PD(2)
PD (1)
PD (2)
EAS
IAR
EAR
Tch
Tstg
30
V
30
V
±20
V
8
A
32
1.5
W
1.1
0.75
W
0.45
83.2
mJ
8
A
0.1
mJ
150
°C
â55 to 150
°C
JEDEC
â
JEITA
â
TOSHIBA
2-6J1E
Weight: 0.08 g (typ.)
Circuit Configuration
8765
1234
Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (âHandling Precautionsâ/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2007-01-16
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