TPC8201 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

TPC8201
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI)
TPC8201
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
Unit: mm
l Low drain−source ON resistance : RDS (ON) = 37 mΩ (typ.)
l High forward transfer admittance : |Yfs| = 6 S (typ.)
l Low leakage current : IDSS = 10 µA (max) (VDS = 30 V)
l Enhancement−mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20kΩ)
Gate-source voltage
Drain curren
DC
Pulse
(Note 1)
(Note 1)
Single-device
Drain power
dissipation
operation
(Note 3a)
(t = 10s)
(Note 2a)
Single-device value
at dual operation
(Note 3b)
Single-device
Drain power
dissipation
operation
(Note 3a)
(t = 10s)
(Note 2b)
Single-device value
at dual operation
(Note 3b)
Single pulse avalanche energy
(Note 4)
Avalanche current
Repetitive avalanche energy
Single-device value at operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_{D (1)}
P_D(2)
P_{D (1)}
P_{D (2)}
E_AS
I_AR
E_AR
T_ch
T_stg
30
V
30
V
±20
V
5
A
20
1.5
W
1.1
0.75
W
0.45
32.5
mJ
5
A
0.1
mJ
150
°C
−55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-6J1E
Weight: 0.08 g (typ.)
Circuit Configuration
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5) please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2003-02-20