TPC8127 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Silicon P Channel MOS Type (U-MOSⅥ)

TPC8127
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ)
TPC8127
Lithium Ion Battery Applications
Power Management Switch Applications
Unit: mm
• Small footprint due to small and thin package
• Low drain-source ON-resistance: R_{DS (ON)} = 5 mΩ (typ.)
• Low leakage current: I_DSS = −10 μA (max) (V_DS = −30 V)
• Enhancement mode: V_th = −0.8 to −2.0 V (V_DS = −10 V, I_D = −0.5mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (t = 10 s)
(Note 2a)
Drain power dissipation (t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
(Note 1)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
E_AS
I_AR
T_ch
T_stg
−30
V
−30
V
−25/+20
V
−13
A
−52
1.9
W
1.0
W
110
mJ
−13
A
150
°C
−55 to 150
°C
Note 1, Note 2, Note 3 : See the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
8765
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2009-11-20