TPC8116-H Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – High Efficiency DC／DC Converter Applications

TPC8116-H
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPC8116-H
High Efficiency DC／DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
CCFL Inverter Applications
Unit: mm
• Small footprint due to a small and thin package
• High speed switching
• Small gate charge: QSW = 9.7 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 24mΩ (typ.)
• High forward transfer admittance: |Yfs| =14 S (typ.)
• Low leakage current: IDSS = −10 µA (max) (VDS = −40 V)
• Enhancement mode: Vth =−0.8 to−2.0 V (VDS =−10 V, ID =−1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
−40
V
−40
V
±20
V
−7.5
A
−30
1.9
W
1.0
W
26
mJ
−7.5
A
0.12
mJ
150
°C
−55 to 150
°C
Note: For Notes 1 to 4, refer to the next page.
This transistor is an electrostatic-sensitive device. Handle with care.
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-6J1B
Weight: 0.085 g (typ.)
Circuit Configuration
8765
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1
2006-01-17