TPC8105-H Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII)

TPC8105-H
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)
TPC8105−H
High Speed and High Efficiency DC−DC Converters
Lithium Ion Battery Applications
Notebook PCs
Portable Equipment Applications
Small footprint due to small and thin package
High speed switching
Small gate charge : Qg = 32 nC (typ.)
Low drain−source ON resistance : RDS (ON) = 20 mΩ (typ.)
High forward transfer admittance : |Yfs| = 12 S (typ.)
Low leakage current : IDSS = −10 µA (max) (VDS = −30 V)
Enhancement−mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
Rating
Unit
−30
V
−30
V
±20
V
−7
A
−28
2.4
W
1.0
W
63.7
mJ
−7
A
0.24
mJ
150
°C
−55 to 150
°C
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
ç
Unit: mmç
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
1
2002-01-18