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TPC8104-H Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) | |||
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TPC8104-H
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed UâMOSII)
TPC8104âH
High Speed and High Efficiency DCâDC Converters
Lithium Ion Battery Applications
Notebook PCs
Portable Equipment Applications
l Small footprint due to small and thin package
l High speed switching
l Small gate charge : Qg = 17 nC (typ.)
l Low drainâsource ON resistance : RDS (ON) = 38 m⦠(typ.)
l High forward transfer admittance : |Yfs| = 7.0 S (typ.)
l Low leakage current : IDSS = â10 µA (max) (VDS = â30 V)
l Enhancementâmode : Vth = â0.8~â2.0 V (VDS = â10 V, ID = â1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kâ¦)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
Rating
Unit
â30
V
â30
V
±20
V
â5
A
â20
2.4
W
1.0
W
32.5
mJ
â5
A
0.24
mJ
150
°C
â55 to 150
°C
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC
â
JEITA
â
TOSHIBA
2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
1
2002-09-11
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