TPC8065-H Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – MOSFETs Silicon N-Channel MOS (U-MOS-H)

MOSFETs Silicon N-Channel MOS (U-MOS-H)
TPC8065-H
1. Applications
• High-Efficiency DC-DC Converters
• Notebook PCs
• Mobile Handsets
2. Features
(1) Small, thin package
(2) High-speed switching
(3) Small gate charge: Q_SW = 4.3 nC (typ.)
(4) Low drain-source on-resistance: R_DS(ON) = 11.9 mΩ (typ.) (V_GS = 4.5 V)
(5) Low leakage current: I_DSS = 10 µA (max) (V_DS = 30 V)
(6) Enhancement mode: V_th = 1.3 to 2.3 V (V_DS = 10 V, I_D = 0.2 mA)
3. Packaging and Internal Circuit
TPC8065-H
SOP-8
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
1
2011-04-06
Rev.2.0