TPC8022-H Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – High-Efficiency DC/DC Converter Applications

TPC8022-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U−MOS III)
TPC8022-H
High-Efficiency DC/DC Converter Applications
Notebook PC Applications
Portable-Equipment Applications
CCFL Inverter Applications
Unit: mm
z Small footprint due to a small and thin package
z High speed switching
z Small gate charge : QSW = 3.5 nC (typ.)
z Low drain−source ON-resistance: RDS (ON) = 22 mΩ (typ.)
z High forward transfer admittance: |Yfs| = 15 S (typ.)
z Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)
z Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 4)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
40
V
40
V
±20
V
7.5
A
30
1.9
W
1.0
W
26
mJ
7.5
A
0.08
mJ
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.085 g (typ.)
Circuit Configuration
8765
1234
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1
2006-11-17