TPC8012-H_06 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Switching Regulator Applications Switching Regulator Applications

TPC8012-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)
TPC8012-H
Switching Regulator Applications
DC／DC Converter Applications
Unit: mm
• Low drain-source ON-resistance: R_{DS (ON)} = 0.28 Ω (typ.)
• High forward transfer admittance: |Y_fs| = 1.35 S (typ.)
• Low leakage current: I_DSS = 100 μA (max) (V_DS = 200 V)
• Enhancement mode: V_th = 3.0 to 5.0 V (V_DS = 10 V, I_D = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
200
V
200
V
±30
V
1.8
A
7.2
1.9
W
1.0
W
2.05
mJ
1.8
A
0.19
mJ
150
°C
−55 to 150
°C
Note: For Notes 1 to 4, refer to the next page.
This transistor is an electrostatic-sensitive device. Handle with care.
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.085 g (typ.)
Circuit Configuration
8765
1234
1
2006-01-17