TPC8012-H Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Switching Regulator Application DC-DC Converters

TPC8012-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSV)
TPC8012-H
Switching Regulator Application
DC-DC Converters
Unit: mm
· Low drain-source ON resistance: RDS (ON) = 0.28 Ω (typ.)
· High forward transfer admittance: |Yfs| = 1.35 S (typ.)
· Low leakage current: IDSS = 100 µA (max) (VDS = 200 V)
· Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kW)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
200
V
200
V
±30
V
1.8
A
7.2
1.9
W
1.0
W
2.05
mJ
1.8
A
0.19
mJ
150
°C
-55 to 150
°C
Note: (Note 1), (Note 2), (Note 3), (Note 4) Please see next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
JEDEC
TO-92
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.80 g (typ.)
Circuit Configuration
8765
1234
1
2002-03-04