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TPC8005-H Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type (High Speed U-MOS) | |||
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TPC8005-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High Speed UâMOS)
TPC8005âH
High Speed and High Efficiency DCâDC Converters
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PC Applications
Small footprint due to small and thin package
High speed switching : 60% speed up (compare with current type)
Small gate charge : Qg = 20 nC (typ.)
Low drainâsource ON resistance : RDS (ON) = 13 m⦠(typ.)
High forward transfer admittance : |Yfs| = 16 S (typ.)
Low leakage current : IDSS = 10 µA (max) (VDS = 30 V)
Enhancementâmode : Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kâ¦)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
30
V
30
V
±20
V
11
A
44
2.4
W
1.0
W
157
mJ
11
A
0.24
mJ
150
°C
â55 to 150
°C
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC
â
JEITA
â
TOSHIBA
2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
1
2002-02-06
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