TPC6D03 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – High-Speed Switching Applications

TPC6D03
TOSHIBA Multi-Chip Device Silicon PNP Epitaxial Type, Schottky Barrier Diode
TPC6D03
High-Speed Switching Applications
DC-DC Converter Applications
• A PNP transistor and a Schottky barrier diode are mounted on a
compact and slim package.
Unit: mm
Maximum Ratings
Transistor (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-collector voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
(Q1 single-device operation)
Junction temperature
Symbol
Rating
Unit
V_CBO
−20
V
V_CEO
−20
V
V_ECO
−9.5
V
V_EBO
−9.5
V
I_C
−1.2
A
I_CP
−2.0
A
I_B
−120
mA
P_C
(Note 1)
400
mW
T_j
150
°C
Diode (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
V_RRM
30
V
Average forward current
I_{F (AV)}
0.7
A
Peak one cycle surge forward current
(sine wave)
I_FSM
7.0
A
Power dissipation
(D1 single-device operation)
P_D
(Note 1)
320
mW
Junction temperature
T_j
125
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3T1F
Weight: 0.011 g (typ.)
Maximum Ratings for Transistor and Diode (Ta = 25°C)
Characteristics
Total power dissipation
(simultaneous operation)
Storage temperature range
Symbol
Rating
Unit
P_T
(Note 2)
600
mW
T_stg
−55~150
°C
Thermal Resistance Characteristics
(for transistor and diode)
Characteristics
Symbol
Max
Unit
Thermal resistance, junction to
ambient (single-device operation)
R_{th (j-a)}
(Note 1)
312
°C/W
Note 1:
Note 2:
Mounted on an FR4 board (glass epoxy, 1.6 mm thick,
Cu area: 645 mm²)
Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm²)
Total power dissipation value when two devices are operated at the same time
1
2004-09-02