TPC6604 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Transistor Silicon PNP Epitaxial Type

TOSHIBA Transistor Silicon PNP Epitaxial Type
TPC6604
High-Speed Switching Applications
DC-DC Converter Applications
TPC6604
Unit: mm
• High DC current gain
: h_FE = 200 to 500 (I_C = -0.1 A)
• Low collector-emitter saturation voltage : V_{CE (sat)} = -0.23 V (max)
• High-speed switching
: t_f = 70 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
(Note 1)
DC
Pulse
Base current
Collector power
dissipation
(Note 2)
DC
t = 10 s
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
-50
V
-50
V
-7
V
-1
A
-2
-0.1
A
0.8
W
1.6
150
°C
−55 to 150
°C
JEDEC
JEITA
TOSHIBA
―
―
2-3T1C
Note 1: Ensure that the junction temperature does not exceed 150°C
during use of the device.
Weight: 0.011 g (typ.)
Note 2: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm²)
Note 3:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-09-02