TPC6603 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Transistor Silicon PNP Epitaxial Type

TOSHIBA Transistor Silicon PNP Epitaxial Type
TPC6603
Switching Applications
DC/DC Converter Applications
Strobe Flash Applications
TPC6603
Unit: mm
• High DC current gain: h_FE = 200 to 500 (I_C = −0.5 A)
• Low collector-emitter saturation: V_{CE (sat)} = −0.19 V (max)
• High-speed switching: t_f = 40 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−30
V
Collector-emitter voltage
V_CEO
−20
V
Emitter-base voltage
V_EBO
−7
V
DC
I_C
Collector current
Pulse
I_CP
−3.0
A
−5.0
1. Collector
2. Collector
3. Base
4. Emitter
5. Collector
6. Collector
Base current
Collector power
dissipation
DC
t = 10 s
Junction temperature
Storage temperature range
I_B
−0.3
mA
0.8
P_C (Note 1)
W
1.6
T_j
150
°C
T_stg
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3T1A
Weight: 0.01 g (typ.)
Note 1: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm²)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2006-11-13