TPC6602_04 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Speed Switching Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type
TPC6602
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
TPC6602
Unit: mm
• High DC current gain: hFE = 200 to 500 (IC = −0.2 A)
• Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max)
• High-speed switching: tf = 25 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−20
V
Collector-emitter voltage
V_CEO
−10
V
Emitter-base voltage
V_EBO
−7
V
Collector current
DC
I_C
Pulse
I_CP
−2.0
A
−3.5
Base current
I_B
−200
mA
Collector power
dissipation
t = 10 s
P_C
1.6
W
DC
(Note)
0.8
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55~150
°C
Note: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm²)
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-3T1
Weight: 0.011 g (typ.)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time Storage time
Fall time
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CEO}
h_FE (1)
h_FE (2)
V_{CE (sat)}
V_{BE (sat)}
C_ob
t_r
t_stg
t_f
V_CB = −20 V, I_E = 0
V_EB = −7 V, I_C = 0
I_C = −10 mA, I_B = 0
V_CE = −2 V, I_C = −0.2 A
V_CE = −2 V, I_C = −0.6 A
I_C = −0.6 A, I_B = −0.02 A
I_C = −0.6 A, I_B = −0.02 A
V_CB = −10 V, I_E = 0, f = 1 MHz
See Figure 1 circuit diagram.
V_CC ∼− −6 V, R_L = 10 Ω
I_B1 = −I_B2 = −20 mA
Min Typ. Max Unit
⎯
⎯ −100 nA
⎯
⎯ −100 nA
−10 ⎯
⎯
V
200 ⎯ 500
125 ⎯
⎯
⎯
⎯ −0.19 V
⎯
⎯ −1.10 V
⎯
12
⎯
pF
⎯
50
⎯
⎯ 115 ⎯
ns
⎯
25
⎯
1
2004-07-07