TPC6602 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE

TOSHIBA Transistor Silicon PNP Epitaxial Type
TPC6602
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
TPC6602
Unit: mm
· High DC current gain: hFE = 200 to 500 (IC = −0.2 A)
· Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max)
· High-speed switching: tf = 25 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
V_CBO
-20
V
V_CEO
-10
V
Emitter-base voltage
Collector current
Base current
DC
Pulse
V_EBO
I_C
I_CP
I_B
-7
V
-2.0
A
-3.5
-200
mA
Collector power
dissipation
t = 10 s
P_C
1.6
W
DC
(Note)
0.8
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
-55~150
°C
Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645
mm²)
JEDEC
―
JEITA
―
TOSHIBA
2-3T1
Weight: 0.011 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time Storage time
Fall time
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CEO}
h_FE (1)
h_FE (2)
V_{CE (sat)}
V_{BE (sat)}
C_ob
t_r
t_stg
t_f
V_CB = -20 V, I_E = 0
V_EB = -7 V, I_C = 0
I_C = -10 mA, I_B = 0
V_CE = -2 V, I_C = -0.2 A
V_CE = -2 V, I_C = -0.6 A
I_C = -0.6 A, I_B = -0.02 A
I_C = -0.6 A, I_B = -0.02 A
V_CB = -10 V, I_E = 0, f = 1 MHz
See Figure 1 circuit diagram.
V_CC ~- -6 V, R_L = 10 W
I_B1 = -I_B2 = -20 mA
Min Typ. Max Unit
¾
¾ -100 nA
¾
¾ -100 nA
-10
¾
¾
V
200
¾
500
125
¾
¾
¾
¾ -0.19 V
¾
¾ -1.10 V
¾
12
¾
pF
¾
50
¾
¾
115
¾
ns
¾
25
¾
1
2002-03-18