TPC6601 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Transistor Silicon PNP Epitaxial Type

TOSHIBA Transistor Silicon PNP Epitaxial Type
TPC6601
High-Speed Switching Applications
DC-DC Converter Applications
TPC6601
Unit: mm
• High DC current gain: h_FE = 200 to 500 (I_C = −0.3 A)
• Low collector-emitter saturation voltage: V_{CE (sat)} = −0.2 V (max)
• High-speed switching: t_f = 90 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
V_CBO
−50
V
V_CEO
−50
V
Emitter-base voltage
Collector current
Base current
DC
Pulse
V_EBO
−7
V
I_C
−2.0
A
I_CP
−3.5
I_B
−0.2
A
Collector power
dissipation
DC
t = 10 s
P_C
0.8
W
(Note 1)
1.6
Junction temperature
T_j
150
°C
JEDEC
―
Storage temperature range
T_stg
−55 to 150
°C
JEITA
―
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu
area: 645 mm²)
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
Note 2:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2006-11-10