TPC6501_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Transistor Silicon NPN Epitaxial Type

TOSHIBA Transistor Silicon NPN Epitaxial Type
TPC6501
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
• High DC current gain: h_FE = 400 to 1000 (I_C = 0.2 A)
• Low collector-emitter saturation voltage: V_{CE (sat)} = 0.12 V (max)
• High-speed switching: t_f = 25 ns (typ.)
TPC6501
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
DC
t = 10 s
Junction temperature
Storage temperature range
V_CBO
20
V
V_CEO
10
V
V_EBO
7
V
I_C
2.0
A
I_CP
3.5
I_B
200
mA
0.8
P_C (Note 1)
W
1.6
T_j
150
°C
T_stg
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm²)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2006-11-10