TPC6201 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

TPC6201
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
TPC6201
HDD Motor Drive Applications
Notebook PC Applications
Portable Equipment Applications
Unit: mm
· Low drain-source ON resistance: RDS (ON) = 80 mΩ (typ.)
· High forward transfer admittance: |Yfs| = 3.8 S (typ.)
· Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
· Enhancement-model: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DSS
30
V
Drain-gate voltage (R_GS = 20 kW)
V_DGR
30
V
Gate-source voltage
V_GSS
±20
V
Drain
current
DC
Pulse
(Note 1)
I_D
(Note 1)
I_DP
2.5
A
10
Drain power
dissipation
Single-device operation
(Note 3a)
(t = 5 s)
(Note 2a)
Single device value at
dual operation (Note 3b)
P_D (1)
P_D (2)
0.9
0.76
W
Drain power
dissipation
Single-device operation
(Note 3a)
(t = 5 s)
(Note 2b)
Single device value at
dual operation (Note 3b)
P_D (1)
P_D (2)
0.4
0.31
W
Single pulse avalanche energy (Note 4)
E_AS
Avalanche current
I_AR
Repetitive avalanche energy (Note 5)
E_AR
Channel temperature
T_ch
Storage temperature range
T_stg
1.0
mJ
1.25
A
0.16
mJ
150
°C
-55 to 150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
JEDEC
―
JEITA
―
TOSHIBA
2-3T1B
Weight: 0.011 g (typ.)
Circuit Configuration
654
123
Marking (Note 6)
Thermal
Resistance
Single-device operation
(Note 3a)
R_{th (ch-a)} (2)
139
(channel-to-ambient)
(t = 5 s)
(Note 2a)
Single device value at
dual operation (Note 3b)
R_{th (ch-a)} (2)
165
Thermal
Resistance
Single-device operation
(Note 3a)
R_{th (ch-a)} (2)
310
(channel-to-ambient)
(t = 5 s)
(Note 2b)
Single device value at
dual operation (Note 3b)
R_{th (ch-a)} (2)
400
°C/W
°C/W
S4A
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5), (Note 6) Please see next page.
This transistor is an electrostatically sensitive device. Please handle it with caution.
1
2002-01-17